| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HN27C4000G-10 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 2 |
HN27C4000G-12 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 3 |
HN27C4000G-15 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 4 |
KM684000G-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
| 5 |
KM684000G-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
| 6 |
KM684000G-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 7 |
KM684000G-8 |
512Kx8 bit CMOS static RAM, 80ns |
Samsung Electronic |
| 8 |
TN1215-1000G-TR |
12A SCRs, 1000V, sensitivity 15mA |
SGS Thomson Microelectronics |
| 9 |
TN1215-1000G-TR |
SENSITIVE & STANDARD(12A SCRs) |
ST Microelectronics |
| 10 |
TN1625-1000G-TR |
Thyristors, 16A, 1000V |
SGS Thomson Microelectronics |
| 11 |
TN1625-1000G-TR |
16A SCRS |
ST Microelectronics |
| 12 |
TN2540-1000G-TR |
25A SCRs, 1000V |
SGS Thomson Microelectronics |
| 13 |
TN2540-1000G-TR |
25A SCRs |
ST Microelectronics |
| | | |
