No. |
Part Name |
Description |
Manufacturer |
1 |
KM684000LR |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
2 |
KM684000LR-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
3 |
KM684000LR-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
4 |
KM684000LR-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
5 |
KM684000LR-5L |
512Kx8 bit CMOS static RAM, 55ns, low power |
Samsung Electronic |
6 |
KM684000LR-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
7 |
KM684000LR-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
8 |
KM684000LR-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
9 |
KM684000LR-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
10 |
KM684000LR-L |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
11 |
KM684000LRI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
12 |
KM684000LRI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
13 |
KM684000LRI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
14 |
KM684000LRI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
15 |
KM684000LRI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
16 |
KM684000LRI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
17 |
TMS3000LR |
V(dd): -30 to +0.3V; 450mW; dual 25-bit static shift register |
Texas Instruments |
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