No. |
Part Name |
Description |
Manufacturer |
1 |
KM684000LT |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
2 |
KM684000LT-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
3 |
KM684000LT-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
4 |
KM684000LT-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
5 |
KM684000LT-5L |
512Kx8 bit CMOS static RAM, 55ns, low power |
Samsung Electronic |
6 |
KM684000LT-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
7 |
KM684000LT-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
8 |
KM684000LT-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
9 |
KM684000LT-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
10 |
KM684000LT-L |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
11 |
KM684000LTI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
12 |
KM684000LTI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
13 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
14 |
KM684000LTI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
15 |
KM684000LTI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
16 |
KM684000LTI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
17 |
MMBD1000LT1 |
Switching Diode |
Motorola |
18 |
MMBD2000LT1 |
Switching diode |
Motorola |
19 |
MMBD3000LT1 |
Switching diode |
Motorola |
20 |
MMBD7000LT1 |
Dual Switching Diode |
Leshan Radio Company |
21 |
MMBD7000LT1 |
Dual Switching Diode |
Motorola |
22 |
MMBD7000LT1 |
Small Signal DL Diode |
ON Semiconductor |
23 |
MMBD7000LT1-D |
Dual Switching Diode |
ON Semiconductor |
24 |
MMBD7000LT3 |
Small Signal DL Diode |
ON Semiconductor |
25 |
MMSD1000LT1 |
Switching Diode |
Motorola |
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