No. |
Part Name |
Description |
Manufacturer |
1 |
HM514400ALJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
2 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
3 |
HM514400ALJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
4 |
HM514800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
5 |
HM514800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
6 |
HM51S4800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
7 |
HM51S4800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
8 |
HY514400ALJ |
1M x 4-bit CMOS DRAM |
etc |
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