No. |
Part Name |
Description |
Manufacturer |
1 |
AMD-K6-200ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz |
Advanced Micro Devices |
2 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
3 |
HM514400ALR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
4 |
HM514400ALR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
5 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
6 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
7 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
8 |
HM514800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
9 |
HM514800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
10 |
HM51S4800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
11 |
HM51S4800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
12 |
HY514400ALR |
1M x 4-bit CMOS DRAM |
etc |
13 |
HY628400ALR2 |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
14 |
HY628400ALR2-E |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
15 |
HY628400ALR2-I |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
16 |
KM684000ALR-5L |
55ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
17 |
KM684000ALR-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
18 |
KM684000ALRI-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
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