No. |
Part Name |
Description |
Manufacturer |
1 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
2 |
HM514400ALT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
3 |
HM514400ALT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
4 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
5 |
HM514400ALTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
6 |
HM514400ALTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
7 |
HM514400ALTZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
8 |
HM514400ALTZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
9 |
HM514400ALTZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
10 |
HM514800ALTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
11 |
HM514800ALTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
12 |
HM51S4800ALTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
13 |
HM51S4800ALTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
14 |
HY628100ALT1 |
128Kx8bit CMOS SRAM |
Hynix Semiconductor |
15 |
HY628100ALT1-55 |
128Kx8bit CMOS SRAM, standby current 100 uA, 55ns |
Hynix Semiconductor |
16 |
HY628100ALT1-70 |
128Kx8bit CMOS SRAM, standby current 100 uA, 70ns |
Hynix Semiconductor |
17 |
HY628100ALT1-85 |
128Kx8bit CMOS SRAM, standby current 100 uA, 85ns |
Hynix Semiconductor |
18 |
HY628400ALT2 |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
19 |
HY628400ALT2-E |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
20 |
HY628400ALT2-I |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
21 |
KM684000ALT-5L |
55ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
22 |
KM684000ALT-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
23 |
KM684000ALTI-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
24 |
TMS28F800ALT |
1 048 576 By 8-Bit, 524 288 By 16-Bit Autoselect Boot Block Flash Memory |
Texas Instruments |
25 |
TMS28F800ALT12BDCDE |
1 048 576 By 8-Bit, 524 288 By 16-Bit Autoselect Boot Block Flash Memory |
Texas Instruments |
26 |
TMS28F800ALT12BDCDL |
1 048 576 By 8-Bit, 524 288 By 16-Bit Autoselect Boot Block Flash Memory |
Texas Instruments |
| | | |