| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM514400BS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 2 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 3 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 4 |
KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 5 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 6 |
KM48C2000BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 7 |
KM48C2100BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 8 |
KM48V2000BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 9 |
KM48V2100BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| | | |
