| No. |
Part Name |
Description |
Manufacturer |
| 1 |
500CJ |
Dual 4 Input Gate |
Amelco Semiconductor |
| 2 |
DG200CJ |
CMOS Dual/Quad SPST Analog Switches |
Harris Semiconductor |
| 3 |
DG200CJ |
CMOS Dual SPST Analog Switches |
Intersil |
| 4 |
DG300CJ |
TTL Compatible CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
| 5 |
GM71C17400CJ |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 6 |
GM71C17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
| 7 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 8 |
GM71C17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
| 9 |
GM71C17800CJ |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 10 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 11 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 12 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 13 |
GM71CS17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
| 14 |
GM71CS17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 15 |
GM71CS17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
| 16 |
GM71CS17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 17 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 18 |
GM71CS17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 19 |
HM514800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 20 |
HM514800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 21 |
HM514800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 22 |
HM514800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 23 |
HM514800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 24 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 25 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 26 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 27 |
HM51S4800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 28 |
HM51S4800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 29 |
KM416C1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 30 |
KM416C1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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