DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 00CJ

Datasheets found :: 61
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
1 DG200CJ CMOS Dual/Quad SPST Analog Switches Harris Semiconductor
2 DG200CJ CMOS Dual SPST Analog Switches Intersil
3 DG300CJ TTL Compatible CMOS Analog Switches MAXIM - Dallas Semiconductor
4 GM71C17400CJ 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Hynix Semiconductor
5 GM71C17400CJ-5 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns Hynix Semiconductor
6 GM71C17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
7 GM71C17400CJ-7 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns Hynix Semiconductor
8 GM71C17800CJ 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Hynix Semiconductor
9 GM71C17800CJ-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns Hynix Semiconductor
10 GM71C17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
11 GM71C17800CJ-7 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns Hynix Semiconductor
12 GM71CS17400CJ-5 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns Hynix Semiconductor
13 GM71CS17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
14 GM71CS17400CJ-7 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns Hynix Semiconductor
15 GM71CS17800CJ-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns Hynix Semiconductor
16 GM71CS17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
17 GM71CS17800CJ-7 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns Hynix Semiconductor
18 HM514800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
19 HM514800CJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
20 HM514800CJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
21 HM514800CJI-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
22 HM514800CJI-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
23 HM51S4800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
24 HM51S4800CJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
25 HM51S4800CJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
26 HM51S4800CJI-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
27 HM51S4800CJI-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
28 KM416C1000CJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
29 KM416C1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
30 KM416C1000CJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic


Datasheets found :: 61
Page: | 1 | 2 | 3 |



© 2024 - www Datasheet Catalog com