No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
2 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
3 |
GM71C17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
4 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
5 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
6 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
7 |
GM71CS17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
8 |
GM71CS17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
9 |
GM71CS17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
10 |
GM71CS17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
11 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
12 |
GM71CS17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
13 |
HM514800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
14 |
HM514800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
15 |
HM514800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
16 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
17 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
18 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
19 |
KM416C1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
20 |
KM416C1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
21 |
KM416C1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
22 |
KM416C1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
23 |
KM416V1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
24 |
KM416V1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
25 |
KM416V1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
26 |
KM416V1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
27 |
M5M417400CJ-5 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
28 |
M5M417400CJ-5S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
29 |
M5M417400CJ-6 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
30 |
M5M417400CJ-6S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
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