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Datasheets for 00CJ-6

Datasheets found :: 14
Page: | 1 |
No. Part Name Description Manufacturer
1 GM71C17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
2 GM71C17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
3 GM71CS17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
4 GM71CS17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
5 HM514800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
6 HM51S4800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
7 KM416C1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
8 KM416C1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
9 KM416V1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
10 KM416V1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
11 M5M417400CJ-6 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM Mitsubishi Electric Corporation
12 M5M417400CJ-6S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM Mitsubishi Electric Corporation
13 M5M44800CJ-6 FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Mitsubishi Electric Corporation
14 M5M44800CJ-6S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Mitsubishi Electric Corporation


Datasheets found :: 14
Page: | 1 |



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