No. |
Part Name |
Description |
Manufacturer |
1 |
AAP200CS-M4A-G-LF-TR |
Electret Condenser Microphone (ECM) Analog Pre-amplifiers |
Microsemi |
2 |
AAP200CS-M4A-G-LF-W |
Electret Condenser Microphone (ECM) Analog Pre-amplifiers |
Microsemi |
3 |
HM514400CS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
4 |
HM514400CS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
5 |
HM514400CS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
6 |
KM416C4000CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
7 |
KM416C4000CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
8 |
KM416C4100CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
9 |
KM416C4100CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
10 |
KM416V4000CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
11 |
KM416V4000CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
12 |
KM416V4000CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
13 |
KM416V4000CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
14 |
KM416V4000CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
15 |
KM416V4000CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
16 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
17 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
18 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
19 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
20 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
21 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
22 |
KM44C4000CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
23 |
KM44C4000CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
24 |
KM44C4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
25 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
26 |
KM44V4000CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
27 |
KM44V4000CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
28 |
KM44V4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
29 |
KM44V4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
30 |
LT1500CS-3 |
Adaptive-Frequency Current Mode Switching Regulators |
Linear Technology |
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