| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3700HR |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 2 |
2N3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 3 |
2N3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 4 |
APTGLQ200HR120G |
Three Level T-type Inverter |
Microsemi |
| 5 |
HYS72D128500HR-7-B |
184-Pin Registered Double Data Rate SDRAM Module |
Infineon |
| 6 |
HYS72D128500HR-7F-B |
184-Pin Registered Double Data Rate SDRAM Module |
Infineon |
| 7 |
HYS72T128000HR |
DDR2 Registered Memory Modules |
Infineon |
| 8 |
HYS72T128000HR-3.7-A |
256MB - 4GB, 240pin |
Infineon |
| 9 |
HYS72T128000HR-37-A |
DDR2 Registered Memory Modules |
Infineon |
| 10 |
HYS72T128000HR-5-A |
256MB - 4GB, 240pin |
Infineon |
| 11 |
HYS72T256000HR-3.7-A |
256MB - 4GB, 240pin |
Infineon |
| 12 |
HYS72T32000HR-3.7-A |
256MB - 4GB, 240pin |
Infineon |
| 13 |
HYS72T32000HR-5-A |
256MB - 4GB, 240pin |
Infineon |
| 14 |
HYS72T64000HR |
DDR2 Registered Memory Modules |
Infineon |
| 15 |
HYS72T64000HR-3.7-A |
256MB - 4GB, 240pin |
Infineon |
| 16 |
HYS72T64000HR-37-A |
DDR2 Registered Memory Modules |
Infineon |
| 17 |
HYS72T64000HR-5-A |
256MB - 4GB, 240pin |
Infineon |
| 18 |
LTA-1000HR |
UNIVERSAL TEN RECTANGULAR BAR |
Lite-On Technology Corporation |
| 19 |
MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 20 |
MRF5S19100HR3 |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
| 21 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 22 |
MRF5S21100HR3 |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 23 |
MRF6P3300HR3 |
RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
Freescale (Motorola) |
| 24 |
MRF6P3300HR5 |
RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
Freescale (Motorola) |
| 25 |
MRF6S21100HR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 26 |
MRF6S23100HR3 |
RF Power Dield Effect Transistors |
Freescale (Motorola) |
| 27 |
MSASC100W100HR |
Schottky Rectifier |
Microsemi |
| 28 |
SM600HRR |
Switching Regulator Power Output Stages |
Microsemi |
| 29 |
SOC3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 30 |
SOC3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| | | |
