No. |
Part Name |
Description |
Manufacturer |
1 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
2 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
3 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
4 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
5 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
6 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
7 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
8 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
9 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
10 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
11 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
12 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
13 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
14 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
15 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
16 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
17 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
18 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
19 |
CC1070 |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps 20-VQFN |
Texas Instruments |
20 |
CC1070-RTR1 |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps |
Texas Instruments |
21 |
CC1070-RTY1 |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps |
Texas Instruments |
22 |
CC1070RGWR |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps 20-VQFN |
Texas Instruments |
23 |
CC1070RGWT |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps 20-VQFN |
Texas Instruments |
24 |
CC1070RSQ |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps |
Texas Instruments |
25 |
CC1070RSQR |
Single-Chip, Low-Power, Low-Cost CMOS FSK/GFSK/ASK/00K RF Transmitter for Narrowband & Multi-Ch Apps |
Texas Instruments |
26 |
DS26F32ME/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
27 |
DS26F32MER-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
28 |
DS26F32MJ-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
29 |
DS26F32MJR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
30 |
DS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
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