| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
| 2 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 3 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 4 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
| 5 |
2N5090 |
NPN silicon RF Power Transistor, 1.2W Output Minimum at 400MHz (7.8 dB Gain) |
Motorola |
| 6 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 7 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 8 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 9 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
| 10 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
| 11 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 12 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 13 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 14 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
| 15 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 16 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 17 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 18 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 19 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 20 |
5962-0623501 |
500MHz Rail-to-Rail Amplifier |
Intersil |
| 21 |
5962-0623502 |
500MHz Rail-to-Rail Amplifier |
Intersil |
| 22 |
5962-0721301QX |
500MHz Rail-to-Rail Amplifiers |
Intersil |
| 23 |
5962-0721302QX |
500MHz Rail-to-Rail Amplifiers |
Intersil |
| 24 |
5962-0721303QY |
500MHz Rail-to-Rail Amplifiers |
Intersil |
| 25 |
5962-9203001M2A |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| 26 |
5962-9203001M2A |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| 27 |
5962-9203001MPA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| 28 |
5962-9203001MPA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| 29 |
5962-9203001MXA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| 30 |
5962-9203001MXA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| | | |
