| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BS62LV2000TI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
| 2 |
BS62LV4000TI |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
| 3 |
BS62UV4000TI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
| 4 |
EN27LV010200TI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 5 |
EN27LV010B200TI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 6 |
EN27LV020200TI |
2Megabit low voltage EPROM (256K x 8). Speed 200ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
| 7 |
EN27LV020B200TI |
2Megabit low voltage EPROM (256K x 8). Speed 200ns. Single +3.3V power supply - unreregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
| 8 |
EN27LV512200TI |
512Kbit EPROM (64K x 8). Speed 200ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
| 9 |
EN27LV512B200TI |
512Kbit EPROM (64K x 8). Speed 200ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
| 10 |
IC62LV12816DL-100TI |
100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low power CMOS static RAM |
ICSI |
| 11 |
IC62LV12816DLL-100TI |
100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low power CMOS static RAM |
ICSI |
| 12 |
IC62LV12816L-100TI |
70ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM |
ICSI |
| 13 |
IC62LV12816LL-100TI |
100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM |
ICSI |
| 14 |
IC62LV256-100TI |
100ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
| 15 |
IC62LV2568L-100TI |
70ns; 2.7-3.6V; 256K x 8 low power and Vcc CMOS static RAM |
ICSI |
| 16 |
IC62LV51216L-100TI |
512 K x 16 bit low voltage and ultra low power CMOS static RAM, 100ns |
ICSI |
| 17 |
IC62LV51216LL-100TI |
512 K x 16 bit low voltage and ultra low power CMOS static RAM, 100ns |
ICSI |
| 18 |
IC62LV5128L-100TI |
70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM |
ICSI |
| 19 |
IC62LV5128LL-100TI |
70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM |
ICSI |
| 20 |
IC62VV12816L-100TI |
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM |
ICSI |
| 21 |
IC62VV12816LL-100TI |
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM |
ICSI |
| 22 |
IC62VV25616L-100TI |
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM |
ICSI |
| 23 |
IC62VV25616L-100TI |
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
Integrated Circuit Solution Inc |
| 24 |
IC62VV25616LL-100TI |
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM |
ICSI |
| 25 |
IC62VV25616LL-100TI |
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
Integrated Circuit Solution Inc |
| 26 |
IC62VV5128L-100TI |
100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM |
ICSI |
| 27 |
IC62VV5128LL-100TI |
100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM |
ICSI |
| 28 |
IS62LV12816L-100TI |
100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM |
ICSI |
| 29 |
IS62LV12816L-100TI |
128K x 16 CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 30 |
IS62LV12816LL-100TI |
100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM |
ICSI |
| | | |
