No. |
Part Name |
Description |
Manufacturer |
1 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
2 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
3 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
4 |
CM100TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5 |
CM100TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
6 |
CM100TU-12H |
Six IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
7 |
CM100TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
8 |
CM100TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
9 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
10 |
CM100TU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
11 |
CM100TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
12 |
CM100TU-24H |
Six IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
13 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
14 |
CM200TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
15 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
16 |
CM200TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
17 |
CM200TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
18 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
19 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
20 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| | | |