| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATP602 |
N-Channel Power MOSFET, 600V, 5A, 2.7Ohm, ATPAK |
ON Semiconductor |
| 2 |
BFL4026 |
N-Channel Power MOSFET, 900V, 5A, 3.6Ohm, TO-220F-3FS |
ON Semiconductor |
| 3 |
BUL310PI |
High voltage fast-switching NPN power transistor, 1000V, 5A |
SGS Thomson Microelectronics |
| 4 |
ENA1370 |
N-Channel Power MOSFET, 600V, 5A, 2.34Ohm, TO-220F-3FS |
ON Semiconductor |
| 5 |
FDD7N20TM |
N-Channel UniFETTM MOSFET 200V, 5A, 690m? |
Fairchild Semiconductor |
| 6 |
FDP5N50 |
N-Channel UniFETTM MOSFET 500V, 5A, 1.4IOhms |
Fairchild Semiconductor |
| 7 |
FDPF5N50T |
N-Channel UniFETTM MOSFET 500V, 5A, 1.4? |
Fairchild Semiconductor |
| 8 |
FDPF7N50U |
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5? |
Fairchild Semiconductor |
| 9 |
FGB5N60UNDF |
600V, 5A, Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 10 |
FGP5N60LS |
600V, 5A, Field Stop IGBT |
Fairchild Semiconductor |
| 11 |
FGP5N60UFD |
600V, 5A Field Stop IGBT |
Fairchild Semiconductor |
| 12 |
MJD122-1 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 13 |
MJD122T4 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 14 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 15 |
MJD127T4 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 16 |
SIDC06D120E6 |
Diodes - HV Chips - SIDC06D120E6, 1200V, 5A |
Infineon |
| 17 |
SIDC06D120F6 |
Diodes - HV Chips - SIDC06D120F6,1200V, 5A |
Infineon |
| 18 |
TIP122 |
Darlington silicon NPN power transistor, 100V, 5A |
Panasonic |
| 19 |
TIP127 |
Darlington silicon PNP power transistor, 100V, 5A |
Panasonic |
| | | |
