| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATF-10100-GP3 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 2 |
CDBD10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 3 |
CDBD10100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 4 |
CDBD20100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 5 |
CDBD20100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 6 |
CDBZ5T30100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=30A |
Comchip Technology |
| 7 |
CDBZ630100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=30A |
Comchip Technology |
| 8 |
MBRF10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 9 |
MLO80100-00940 |
Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz |
MA-Com |
| 10 |
MLO80100-01020 |
1000-1040 MHz, Surface mount voltage controlled oscillator EGSM |
MA-Com |
| 11 |
MLO80100-01020 |
Surface Mount Voltage Controlled Oscillator EGSM 1000 - 1040 MHz |
Tyco Electronics |
| 12 |
MSA-0100-GP4 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 13 |
NE8500100-RG |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 14 |
NE8500100-WB |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 15 |
RD50100-W-AU |
100 V, 50 A, rectifier automotive die |
TRANSYS Electronics Limited |
| 16 |
SR10100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=10A |
Comchip Technology |
| 17 |
STPP0100-AA |
Laser pico projection specific image processor |
ST Microelectronics |
| | | |
