| No. |
Part Name |
Description |
Manufacturer |
| 1 |
29C010TC-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
| 2 |
29C010TC-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 3 |
29C010TC-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 4 |
29C010TC-2 |
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 5 |
29C010TC-3 |
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 6 |
29C010TC-3 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 7 |
BH616UV8010TC |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
Brilliance Semiconductor |
| 8 |
HY57V648010TC-10 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
| 9 |
HY57V648010TC-12 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
| 10 |
HY57V648010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 11 |
HY57V658010TC-10 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
| 12 |
HY57V658010TC-12 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
| 13 |
HY57V658010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 14 |
MX23C1010TC-10 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| 15 |
MX23C1010TC-12 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| 16 |
MX23C1010TC-15 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| 17 |
MX23C1010TC-45 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| 18 |
MX23C1010TC-70 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| 19 |
MX23C1010TC-90 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
| | | |
