No. |
Part Name |
Description |
Manufacturer |
1 |
2722 162 01871 |
BAND III CIRCULATORS |
Philips |
2 |
CX20187 |
Dolby B-C Type Noise Reduction System |
SONY |
3 |
ICL7129ACMH+C10187 |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers |
MAXIM - Dallas Semiconductor |
4 |
K7D801871B-HC25 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
5 |
K7D801871B-HC30 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
6 |
K7D801871B-HC33 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
7 |
K7D801871B-HC35 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
8 |
K7D801871B-HC37 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
9 |
MA40187D |
Zero Bias Detector Diodes |
Tyco Electronics |
10 |
PTB20187 |
4 Watts, 1.8�2.0 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
11 |
T7S01875 |
Phase control SCR. 750A, 1800V. |
Powerex Power Semiconductors |
12 |
T8201875 |
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
13 |
T820187504DH |
1800V, 750A phase control single thyristor |
Powerex Power Semiconductors |
14 |
UP01878 |
Composite Device - Composite Transistors |
Panasonic |
15 |
UP01878G |
Silicon N-channel MOS FET |
Panasonic |
16 |
UP0187B |
Silicon N-channel MOSFET |
Panasonic |
17 |
UP0187BG |
Silicon N-channel MOSFET |
Panasonic |
18 |
XN01871 |
Composite Device - Composite Transistors |
Panasonic |
19 |
XN01872 |
Composite Device - Composite Transistors |
Panasonic |
20 |
XN01872G |
Silicon n-channel enhancement MOSFET |
Panasonic |
21 |
XP01878 |
Composite Device - Composite Transistors |
Panasonic |
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