No. |
Part Name |
Description |
Manufacturer |
1 |
5962-8767901EC |
5962-8767901EC · Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
2 |
5962-8767901EC |
5962-8767901EC · Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
3 |
5962-8957201EC |
5962-8957201EC · Hermetically Sealed, Dual Channel Line Receiver Optocouplers |
Agilent (Hewlett-Packard) |
4 |
5962-8957201EC |
5962-8957201EC · Hermetically Sealed, Dual Channel Line Receiver Optocouplers |
Agilent (Hewlett-Packard) |
5 |
74ALVCH32501EC |
36-bit universal bus transceiver with direction pin; 5 V tolerant; 3-state |
Philips |
6 |
8102801EC |
8102801EC · Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers |
Agilent (Hewlett-Packard) |
7 |
8102801EC |
8102801EC · Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers |
Agilent (Hewlett-Packard) |
8 |
8302401EC |
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
9 |
8302401EC |
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
10 |
BS62LV4001EC |
Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
11 |
BS62LV8001EC |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
12 |
BS62LV8001EC-55 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
13 |
BS62LV8001EC-70 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
14 |
BS62LV8001ECG55 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
15 |
BS62LV8001ECG70 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
16 |
BS62LV8001ECP55 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
17 |
BS62LV8001ECP70 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
Brilliance Semiconductor |
18 |
GTVA107001EC/FC-V1 |
High Power RF GaN on SiC HEMT 700W, 50V, 960 - 1215 MHz |
Wolfspeed |
19 |
GTVA126001EC/FC-V1 |
High Power RF GaN on SiC HEMT, 600W, 50V, 1200MHz to 1400MHz |
Wolfspeed |
20 |
GTVA355001EC-FC-V1 |
High Power RF GaN on SiC HEMTs 500W, 50V, 2900 - 3500 MHz |
Wolfspeed |
21 |
M38501EC-XXXFP |
RAM size:256 bytes; single-chip 8-bit microcomputer |
Mitsubishi Electric Corporation |
22 |
M38501EC-XXXSP |
RAM size:256 bytes; single-chip 8-bit microcomputer |
Mitsubishi Electric Corporation |
23 |
M38501EC-XXXSS |
RAM size:256 bytes; single-chip 8-bit microcomputer |
Mitsubishi Electric Corporation |
24 |
M38501ECH-FP |
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
25 |
M38501ECH-SP |
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
26 |
M38501ECH-SS |
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
27 |
MAX2701ECM |
1.8GHz to 2.5GHz Direct Downconversion Receivers |
MAXIM - Dallas Semiconductor |
28 |
MAX2701ECM+D |
1.8GHz to 2.5GHz, Direct-Downconversion Receivers |
MAXIM - Dallas Semiconductor |
29 |
MAX2701ECM+TD |
1.8GHz to 2.5GHz, Direct-Downconversion Receivers |
MAXIM - Dallas Semiconductor |
30 |
MAX2701ECM-D |
1.8GHz to 2.5GHz, Direct-Downconversion Receivers |
MAXIM - Dallas Semiconductor |
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