| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BD71801GWL |
Power Management LSI for Mobile Phone |
ROHM |
| 2 |
BD71801GWL-E2 |
Power Management LSI for Mobile Phone |
ROHM |
| 3 |
KBPC1001GW |
10A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 4 |
KBPC1501GW |
15,25,35A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 5 |
KBPC2501GW |
15,25,35A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 6 |
KBPC3501GW |
15,25,35A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 7 |
KBPC4001GW |
40, 50A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 8 |
KBPC5001GW |
40, 50A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 9 |
MM1301GW |
Protection of lithium ion battery (four cells in series) |
Mitsumi Electric |
| 10 |
NAND01GW3A |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 11 |
NAND01GW3A0AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 12 |
NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 13 |
NAND01GW3A0AN6E |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 14 |
NAND01GW3A0AN6F |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 15 |
NAND01GW3A0AN6T |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 16 |
NAND01GW3A0AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 17 |
NAND01GW3A0AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 18 |
NAND01GW3A0AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 19 |
NAND01GW3A0AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 20 |
NAND01GW3A0AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 21 |
NAND01GW3A0AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 22 |
NAND01GW3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 23 |
NAND01GW3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 24 |
NAND01GW3A2AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 25 |
NAND01GW3A2AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 26 |
NAND01GW3A2AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 27 |
NAND01GW3A2AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 28 |
NAND01GW3A2AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 29 |
NAND01GW3A2AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 30 |
NAND01GW3A3AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
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