No. |
Part Name |
Description |
Manufacturer |
1 |
DSM80101M-7 |
PNP Transistor with Dual series switching Diode |
Diodes |
2 |
ICS601M-01 |
Low Phase Noise Clock Multiplier |
Integrated Circuit Systems |
3 |
ICS601M-01I |
Low Phase Noise Clock Multiplier |
Integrated Circuit Systems |
4 |
ICS601M-01ILF |
LOW PHASE NOISE CLOCK MULTIPLIER |
Integrated Circuit Systems |
5 |
ICS601M-01ILFT |
LOW PHASE NOISE CLOCK MULTIPLIER |
Integrated Circuit Systems |
6 |
ICS601M-01IT |
Low Phase Noise Clock Multiplier |
Integrated Circuit Systems |
7 |
ICS601M-01LF |
LOW PHASE NOISE CLOCK MULTIPLIER |
Integrated Circuit Systems |
8 |
ICS601M-01LFT |
LOW PHASE NOISE CLOCK MULTIPLIER |
Integrated Circuit Systems |
9 |
ICS601M-01T |
Low Phase Noise Clock Multiplier |
Integrated Circuit Systems |
10 |
ISL38001M-CD |
ISL38001M PRISM GT miniPCI IEEE 802.11g/ 802.11b WLAN NIC |
Intersil |
11 |
ISL38001M-EVAL |
ISL38001M PRISM GT miniPCI IEEE 802.11g/ 802.11b WLAN NIC |
Intersil |
12 |
ISL38601M-CD |
ISL38601M PRISM GT miniPCI IEEE 802.11g/ 802.11b WLAN NIC |
Intersil |
13 |
ISL38601M-EVAL |
ISL38601M PRISM GT miniPCI IEEE 802.11g/ 802.11b WLAN NIC |
Intersil |
14 |
K7N321801M-QC20 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
15 |
K7N321801M-QC25 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
16 |
K7N323601M-QC20 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
17 |
K7N323601M-QC25 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
18 |
LE28C1001M-12 |
1MEG (131072words x 8bits) flash memory |
SANYO |
19 |
LE28C1001M-15 |
1MEG (131072words x 8bits) flash memory |
SANYO |
20 |
LE28C1001M-90 |
1MEG (131072words x 8bits) flash memory |
SANYO |
21 |
LE28CV1001M-12 |
1MEG (131072words x 8bit) flash memory |
SANYO |
22 |
LE28CV1001M-15 |
1MEG (131072words x 8bit) flash memory |
SANYO |
23 |
LE28F4001M-15 |
4MEG (524288words x 8bit) flash memory |
SANYO |
24 |
LE28F4001M-20 |
4MEG (524288words x 8bit) flash memory |
SANYO |
25 |
LE28FV4001M-20 |
4MEG (524288words x 8bit) flash memory |
SANYO |
26 |
LE28FV4001M-25 |
4MEG (524288words x 8bit) flash memory |
SANYO |
27 |
LH543601M-20 |
256 x 36 x 2 bidirectional FIFO |
SHARP |
28 |
LH543601M-25 |
256 x 36 x 2 bidirectional FIFO |
SHARP |
29 |
LH543601M-30 |
256 x 36 x 2 bidirectional FIFO |
SHARP |
30 |
LH543601M-35 |
256 x 36 x 2 bidirectional FIFO |
SHARP |
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