No. |
Part Name |
Description |
Manufacturer |
1 |
5962-1021701 |
50W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021701 |
International Rectifier |
2 |
5962-1021701 |
50W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021701 |
International Rectifier |
3 |
AMBA310217 |
MA Motion Sensor |
Panasonic |
4 |
AMBA340217 |
MA Motion Sensor |
Panasonic |
5 |
ASI30217 |
MICROSTRIP/STRIPLINE PIN DIODE SWITCH |
Advanced Semiconductor |
6 |
GH2803R3S |
50W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021701 |
International Rectifier |
7 |
INA-02170 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
8 |
INA-02170 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
AVANTEK |
9 |
M30217MA-XXXXFP |
Single chip 16-bit CMOS microcomputer. RAM size 12K bytes, ROM size 128K bytes |
Mitsubishi Electric Corporation |
10 |
MLX90217L |
Hall-effect cam sensor |
Melexis |
11 |
PL902170USY |
Clock and Timing - Clock Generation |
Microchip |
12 |
PL902170USY-TR |
Clock and Timing - Clock Generation |
Microchip |
13 |
PL902171USY |
Clock and Timing - Clock Generation |
Microchip |
14 |
PL902171USY-TR |
Clock and Timing - Clock Generation |
Microchip |
15 |
Q60217-Y20 |
PNP THYRISTOR TETRODE |
Siemens |
16 |
SRD00217G |
Ternary PIN Photodiode with Receptacle |
Infineon |
17 |
SRD00217GE9230 |
Ternary PIN Photodiode with Receptacle |
Infineon |
18 |
SRD00217GE9484 |
Ternary PIN Photodiode with Receptacle |
Infineon |
19 |
SRD00217H |
Ternary PIN Photodiode with Receptacle |
Infineon |
20 |
SRD00217HE9478 |
Ternary PIN Photodiode with Receptacle |
Infineon |
21 |
SRD00217NE9293 |
Ternary PIN Photodiode with Receptacle |
Infineon |
22 |
SRD00217NE9403 |
Ternary PIN Photodiode with Receptacle |
Infineon |
23 |
UNA0217 |
Composite Device - Small Signal Transistor Arrays |
Panasonic |
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