No. |
Part Name |
Description |
Manufacturer |
1 |
29C021TC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
2 |
29C021TC-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
3 |
29C021TC-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
4 |
29C021TC-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
5 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
6 |
29C021TC-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
7 |
HY57V648021TC-10 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 100ns |
Hynix Semiconductor |
8 |
HY57V648021TC-7 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
9 |
HY57V648021TC-8 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 80ns |
Hynix Semiconductor |
10 |
HY57V658021TC-10 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 100ns |
Hynix Semiconductor |
11 |
HY57V658021TC-7 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
12 |
HY57V658021TC-8 |
2Mbit x 4 bank x 8 SDRAM, SSTL, 80ns |
Hynix Semiconductor |
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