No. |
Part Name |
Description |
Manufacturer |
1 |
1N4566 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
2 |
1N4571 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
3 |
1N4576 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
4 |
1N4581 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
5 |
2524 |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
6 |
2524V |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
7 |
2525 |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
8 |
2525V |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
9 |
5962-9560801NXD |
1024 x 36 Synchronous FIFO Memory |
Texas Instruments |
10 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
11 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Advanced Micro Devices |
12 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Monolithic Memories |
13 |
6638 |
T-1 subminiature, wire lead lamp. 28.0 volts, 0.024 amps. |
Gilway Technical Lamp |
14 |
6839 |
T-1 subminiature, miniature flanged lamp. 28.0 volts, 0.024 amps. |
Gilway Technical Lamp |
15 |
7839 |
T-1 subminiature, bi-pin lamp. 28.0 volts, 0.024 amps. |
Gilway Technical Lamp |
16 |
8102402VA |
1024 x 4 CMOS RAM |
Intersil |
17 |
8102404VA |
1024 x 4 CMOS RAM |
Intersil |
18 |
8102406VA |
1024 x 4 CMOS RAM |
Intersil |
19 |
82S26 |
1024 BIT bipolar programmable ROM (256 x 4 PROM) |
Signetics |
20 |
82S29 |
1024 BIT bipolar programmable ROM (256 x 4 PROM) |
Signetics |
21 |
85C82 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface |
Philips |
22 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
23 |
93L415APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
24 |
93L425ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
25 |
93L425APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
26 |
AD5235BRU25 |
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers |
Analog Devices |
27 |
AD5235BRU250 |
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers |
Analog Devices |
28 |
ADN2850ACP25 |
Nonvolatile Memory, Dual 1024 Position Programmable Resistors |
Analog Devices |
29 |
ADN2850ACP25-RL7 |
Nonvolatile Memory, Dual 1024 Position Programmable Resistors |
Analog Devices |
30 |
ADN2850ACP250 |
Nonvolatile Memory, Dual 1024 Position Programmable Resistors |
Analog Devices |
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