No. |
Part Name |
Description |
Manufacturer |
1 |
1N4767A |
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. |
Motorola |
2 |
1N4772A |
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. |
Motorola |
3 |
FDD3672_NL |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package |
Fairchild Semiconductor |
4 |
HMMC-3028 |
HMMC-3028 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
5 |
HSDL-3005-028 |
HSDL-3005-028 · Top View - Infrared transceivers with remote control features integrated |
Agilent (Hewlett-Packard) |
6 |
IMC-1210 |
Molded, Wirewound Inductor |
Vishay |
7 |
MTP50N06 |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
8 |
MTP50N06 |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
9 |
MTP50N06EL |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
10 |
MTP50N06V |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
11 |
MTY55N20E |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
Motorola |
12 |
P40NF10L |
N-CHANNEL 100V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
13 |
RE028 |
The RE028 is a Low Drop Out (LDO) voltage regulator macrocell with a fixed 4.5V output voltage, rated for loads up to 300 mA. It is designed to supply radio frequency synthesizers and used as a controller for the antenna switch. |
Atmel |
14 |
RF1S45N06LESM |
45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs |
Intersil |
15 |
RF1S45N06SM |
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs |
Intersil |
16 |
RFG45N06 |
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs |
Intersil |
17 |
RFP45N06 |
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
18 |
RFP45N06 |
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs |
Intersil |
19 |
RFP45N06LE |
45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs |
Intersil |
20 |
SK028 520 |
Multilayer IC packages side-braze-type |
Tesla Elektronicke |
21 |
SK028 542 |
Multilayer IC packages side-braze-type |
Tesla Elektronicke |
22 |
STB40NF10L |
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
23 |
STB40NF10L |
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
24 |
STB40NF10LT4 |
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
25 |
STB75NF20 |
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
26 |
STP30NE03L |
N - CHANNEL 30V - 0.028 Ohms - 30A TO-220/TO-220FP STripFET POWER MOSFET |
SGS Thomson Microelectronics |
27 |
STP30NE03LFP |
N - CHANNEL 30V - 0.028 Ohms - 30A TO-220/TO-220FP STripFET POWER MOSFET |
SGS Thomson Microelectronics |
28 |
STP40NF10L |
N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
29 |
STP40NF10L |
N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
30 |
STP40NF12 |
N-CHANNEL 120V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
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