| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N7002E-13-F |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 2 |
A-402E-10 |
Common anode hi.effi red dual digit display |
PARA Light |
| 3 |
A-502E-10 |
DUAL DIGITS DISPLAY |
PARA Light |
| 4 |
AS91L1002E-10L100-CF |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
| 5 |
AS91L1002E-10L100-CG |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
| 6 |
AS91L1002E-10L100-I |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
| 7 |
AS91L1002E-10L100-IF |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
| 8 |
AS91L1002E-10L100-IG |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
| 9 |
C-402E-10 |
Common cathode hi.effi red dual digit display |
PARA Light |
| 10 |
C-502E-10 |
DUAL DIGITS DISPLAY |
PARA Light |
| 11 |
KM684002E-17 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
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