| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE120A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
| 2 |
1.5KE120A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
| 3 |
1.5KE120CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
| 4 |
1.5KE120CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
| 5 |
1N5631A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 6 |
1N5659A |
Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 7 |
1N6269A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 8 |
1N6297A |
Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 9 |
2N7002V |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 10 |
2N7002V |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 11 |
2N7002V-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 12 |
2N7002V/VA |
MOSFETS |
Diodes |
| 13 |
2N7002VA |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 14 |
2N7002VA |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 15 |
2N7002VA-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 16 |
2N7002VAC |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 17 |
2N7002VAC-7 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 18 |
2N7002VC |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 19 |
2N7002VC-7 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 20 |
30KPA102 |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 21 |
30KPA102A |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 22 |
30KPA102C |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 23 |
30KPA102CA |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 24 |
5962-0052102VFA |
Complementary Switch FET Drivers . 16-CFP -55 to 125 |
Texas Instruments |
| 25 |
5962-0150202VXA |
RadHard 1750AR RISC microcontroller: SMD. 16MHz, RH microcontroller. Class V. Lead finish solder. Total dose none. |
Aeroflex Circuit Technology |
| 26 |
5962-0150202VXC |
RadHard 1750AR RISC microcontroller: SMD. 16MHz, RH microcontroller. Class V. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 27 |
5962-0150202VXX |
RadHard 1750AR RISC microcontroller: SMD. 16MHz, RH microcontroller. Class V. Lead finish optional. Total dose none. |
Aeroflex Circuit Technology |
| 28 |
5962-0150202VYC |
RadHard 1750AR RISC microcontroller: SMD. 16MHz, RH microcontroller. Class V. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 29 |
5962-0323602VXA |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 30 |
5962-0323602VXC |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
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