No. |
Part Name |
Description |
Manufacturer |
1 |
IRU1030CT |
3A Adj LDO Linear Regulator in a TO-220 3-Leads package |
International Rectifier |
2 |
KM416S4030CT-F10 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
3 |
KM416S4030CT-F7 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
4 |
KM416S4030CT-F8 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
5 |
KM416S4030CT-FH |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
6 |
KM416S4030CT-FL |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
7 |
KM416S4030CT-G |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
8 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
9 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
10 |
KM416S4030CT-GH |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
11 |
KM416S4030CT-GL |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
12 |
KM416S4030CT-L10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
13 |
KM432S2030CT-F10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
14 |
KM432S2030CT-F6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
15 |
KM432S2030CT-F7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
16 |
KM432S2030CT-F8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
17 |
KM432S2030CT-G10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
18 |
KM432S2030CT-G6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
19 |
KM432S2030CT-G7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
20 |
KM432S2030CT-G8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
21 |
KM44S16030CT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
22 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
23 |
KM44S16030CT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
24 |
KM44S16030CT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
25 |
KM44S16030CT-G_FL |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
26 |
KM48S8030CT-G/FA |
2M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
27 |
KM48S8030CT-G_F10 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
28 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
29 |
KM48S8030CT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
30 |
KM48S8030CT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
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