| No. |
Part Name |
Description |
Manufacturer |
| 1 |
285D106X0030G2 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 2 |
285D306X0030G3 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 3 |
285D606X0030G4 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 4 |
285D856X0030G5 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 5 |
ASDX030G24D |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
etc |
| 6 |
ASDX030G24H |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
etc |
| 7 |
ASDX030G24M |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
etc |
| 8 |
ASDX030G24R |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
etc |
| 9 |
HYM322030GS-50 |
2M x 32-Bit Dynamic RAM Module |
Siemens |
| 10 |
HYM322030GS-60 |
2M x 32 Bit DRAM Module |
Infineon |
| 11 |
HYM322030GS-60 |
2M x 32-Bit Dynamic RAM Module |
Siemens |
| 12 |
HYM322030GS-70 |
2M x 32 Bit DRAM Module |
Infineon |
| 13 |
HYM322030GS-70 |
2M x 32-Bit Dynamic RAM Module |
Siemens |
| 14 |
HYM72V8030GS-50 |
8M x 72-Bit Dynamic RAM Module |
Siemens |
| 15 |
HYM72V8030GS-60 |
8M x 72-Bit Dynamic RAM Module |
Siemens |
| 16 |
MA4ZD030G |
Silicon epitaxial planar type |
Panasonic |
| 17 |
MADA2030G |
DC-2 GHz, 5-Bit GaAs attenuator |
MA-Com |
| 18 |
MADA2030G |
5-Bit GaAs Digital Attenuator DC - 2 GHz |
Tyco Electronics |
| 19 |
MASW4030G |
DC-4 GHz GaAs DPDT switch |
MA-Com |
| 20 |
MASW4030G |
GaAs SPDT Switch DC - 4 GHz |
Tyco Electronics |
| 21 |
MAX17030GTL+ |
1/2/3-Phase Quick-PWM IMVP-6.5 VID Controllers |
MAXIM - Dallas Semiconductor |
| 22 |
MAX17030GTL+T |
1/2/3-Phase Quick-PWM IMVP-6.5 VID Controllers |
MAXIM - Dallas Semiconductor |
| 23 |
MAZ8030G |
Silicon planar type |
Panasonic |
| 24 |
MAZS030G |
Silicon planar type |
Panasonic |
| 25 |
MW5IC2030GMBR1 |
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| | | |
