No. |
Part Name |
Description |
Manufacturer |
1 |
GS84036AB-100 |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
2 |
GS84036AB-100I |
100MHz 12ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
3 |
GS84036AB-150 |
150MHz 10ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
4 |
GS84036AB-150I |
150MHz 8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
5 |
GS84036AB-166 |
166MHz 8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
6 |
GS84036AB-166I |
166MHz 8.5ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
7 |
GS84036AB-180 |
180MHz 8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
8 |
GS84036AB-180I |
180MHz 8ns 128K x 36 4Mb sync burst SRAM |
GSI Technology |
9 |
IRFG110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
10 |
IRFG110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
11 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
12 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
13 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
14 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
15 |
IRFG5210(N) |
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
16 |
IRFG5210(P) |
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
17 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
18 |
IRFG6110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
19 |
IRFG6110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
20 |
IRFG9110 |
100V Quad P-Channel MOSFET in a MO-036AB package |
International Rectifier |
21 |
IRFG9110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
22 |
IRHG3110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
23 |
IRHG4110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
24 |
IRHG53110 |
100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
25 |
IRHG53110SCS |
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
26 |
IRHG563110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
27 |
IRHG563110(N) |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
28 |
IRHG563110(P) |
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
29 |
IRHG567110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
30 |
IRHG567110(N) |
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
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