No. |
Part Name |
Description |
Manufacturer |
1 |
AME8803FEEY |
300mA CMOS LDO |
AME |
2 |
AME8803FEEY |
300mA CMOS LDO |
Analog Microelectronics |
3 |
BCR103FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
4 |
HN2S03FE |
Small-signal Schottky barrier diode |
TOSHIBA |
5 |
M38503FEH-XXXFP |
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
6 |
M38503FEH-XXXSP |
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
7 |
M38503FEH-XXXSS |
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
8 |
MAQ17503FE |
Radiation hard MIL-STD-1750A interrupt unit |
Dynex Semiconductor |
9 |
MAR17503FE |
Radiation hard MIL-STD-1750A interrupt unit |
Dynex Semiconductor |
10 |
MAS17503FE |
Radiation hard MIL-STD-1750A interrupt unit |
Dynex Semiconductor |
11 |
MAX8903FETI+ |
2A 1-Cell Li+ DC-DC Charger for USB and Adapter Power |
MAXIM - Dallas Semiconductor |
12 |
MAX8903FETI+T |
2A 1-Cell Li+ DC-DC Charger for USB and Adapter Power |
MAXIM - Dallas Semiconductor |
13 |
RN1903FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
14 |
RN2903FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
15 |
RN4903FE |
Transistor Silicon PNP � NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
16 |
SSM3K03FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
17 |
SSM6K203FE |
Small-signal MOSFET |
TOSHIBA |
18 |
SSM6N03FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
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