| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 3 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 4 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 5 |
K4F170412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 6 |
K4F170412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 7 |
K4F170412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 8 |
K4F170412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 9 |
R9G20412CS |
400V, 1200A fast recovery single diode |
Powerex Power Semiconductors |
| 10 |
USB0412C |
Transient Voltage Suppressor |
Microsemi |
| 11 |
USB50412C |
Transient Voltage Suppressor |
Microsemi |
| 12 |
USB50412CE3/TR7 |
Low Capacitance TVS Array |
Microsemi |
| 13 |
USBQ50412CE3/TR7 |
TVS Array |
Microsemi |
| 14 |
USBQNM50412CE3 |
TVS Array |
Microsemi |
| | | |
