DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 04CJ

Datasheets found :: 44
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 504CJ Dual 4 Input Gate Amelco Semiconductor
2 DG304CJ CMOS Analog Switchs MAXIM - Dallas Semiconductor
3 DM2504CJ Successive Approximation Registers National Semiconductor
4 DS2004CJ High Current/Voltage Darlington Drivers National Semiconductor
5 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
6 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
8 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
9 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
10 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
11 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
12 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
13 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
14 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
15 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
16 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
17 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
18 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
19 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
20 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
21 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
22 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
23 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
24 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
25 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
26 KM416V1004CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
27 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
28 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
29 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
30 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic


Datasheets found :: 44
Page: | 1 | 2 |



© 2024 - www Datasheet Catalog com