| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5962D0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 2 |
5962D0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 3 |
5962D0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 4 |
5962D9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 5 |
5962D9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 6 |
5962D9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 7 |
5962L0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 8 |
5962L0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 9 |
5962L0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 10 |
5962L9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 11 |
5962L9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 12 |
5962L9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 13 |
5962P0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 14 |
5962P0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 15 |
5962P0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 16 |
5962P9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 17 |
5962P9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 18 |
5962P9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 19 |
FQG4904TU |
400V Dual N & P-Channel QFET |
Fairchild Semiconductor |
| 20 |
JDP3C04TU |
Radio-frequency switching diode |
TOSHIBA |
| 21 |
MSK5004TU |
Dual positive/negative, 3A, low dropout fixed voltage regulator |
M.S. Kennedy Corp. |
| 22 |
MSK5204TU |
Dual positive/negative, 3 AMP, ultra low dropout fixed voltage regulator |
M.S. Kennedy Corp. |
| 23 |
SSM3K104TU |
Small-signal MOSFET |
TOSHIBA |
| 24 |
SSM5G04TU |
Multi-chip discrete device (P-ch + SBD) |
TOSHIBA |
| 25 |
SSM6K404TU |
Small-signal MOSFET |
TOSHIBA |
| | | |
