No. |
Part Name |
Description |
Manufacturer |
1 |
1N1052 |
Silicon Rectifier Diode 50V 0.5A |
Motorola |
2 |
1N3052 |
Rectifier Diode |
Motorola |
3 |
1N4052 |
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
4 |
1N4052 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
5 |
1N4052 |
Rectifier Diode 600V |
Motorola |
6 |
1N4052 |
Diode 600V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
7 |
1N4052 |
600V, 275A general purpose single diode |
Powerex Power Semiconductors |
8 |
1N5052 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
9 |
1N5052 |
Rectifier Diode 700V 1.5A Replacement 1N4006 |
Motorola |
10 |
1N6052 |
Transient Voltage Suppressor |
Microsemi |
11 |
1N6052 |
Diode TVS Single Bi-Dir 29V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
12 |
232267191052 |
PTC Thermistors, For Temperature Protection |
Vishay |
13 |
2N1052 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14 |
2N1052 |
Silicon NPN Transistor |
Motorola |
15 |
2N1052 |
GERMANIUM POWER TRANSISTORS |
New Jersey Semiconductor |
16 |
2N3052 |
Silicon NPN Transistor |
Motorola |
17 |
2N3052 |
Silicon transistor NPN differential amplifiers |
Sprague |
18 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
19 |
2N4052 |
Germanium PNP Transistor |
Motorola |
20 |
2N4052 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
21 |
2N5052 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
22 |
2N5052 |
Silicon NPN Transistor |
Motorola |
23 |
2N5052 |
Trans GP BJT NPN 200V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
24 |
2N5052 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
25 |
2N5052 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
26 |
2N5052 |
Silicon NPN power transistor, TO-66 package |
Silicon Transistor Corporation |
27 |
2N6052 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
28 |
2N6052 |
Leaded Power Transistor Darlington |
Central Semiconductor |
29 |
2N6052 |
100V power complementary silicon transistor |
Comset Semiconductors |
30 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
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