No. |
Part Name |
Description |
Manufacturer |
1 |
1N1054 |
Silicon Rectifier Diode 150V 0.5A |
Motorola |
2 |
1N2054 |
50V 250A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
3 |
1N2054 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
4 |
1N2054 |
Rectifier Diode |
Motorola |
5 |
1N2054R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
6 |
1N3054 |
Rectifier Diode |
Motorola |
7 |
1N4054 |
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
8 |
1N4054 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
9 |
1N4054 |
Rectifier Diode 800V |
Motorola |
10 |
1N4054 |
Diode 800V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
11 |
1N4054 |
800V, 275A general purpose single diode |
Powerex Power Semiconductors |
12 |
1N4054R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
13 |
1N4054R |
800V, 275A general purpose single diode |
Powerex Power Semiconductors |
14 |
1N5054 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
International Rectifier |
15 |
1N5054 |
Rectifier Diode 1000V 1.5A Replacement 1N4007 |
Motorola |
16 |
1N6054 |
Transient Voltage Suppressor |
Microsemi |
17 |
1N6054 |
Diode TVS Single Bi-Dir 34V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
18 |
1N6054A |
Transient Voltage Suppressor |
Microsemi |
19 |
1N6054A |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
20 |
1N6054AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
21 |
1N6054E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
22 |
21054E |
16K1.8VI2C SERIAL EEPROM |
Microchip |
23 |
232264054202 |
NTC Thermistors, Accuracy Line |
Vishay |
24 |
2722 162 05401 |
Circulators/Isolators 2450 to 2850 MHz |
Philips |
25 |
2722 162 05411 |
Circulators/Isolators 2000 to 2700 MHz |
Philips |
26 |
2722 162 05471 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
27 |
2N1054 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
28 |
2N1054 |
Silicon NPN Transistor |
Motorola |
29 |
2N1054 |
GERMANIUM POWER TRANSISTORS |
New Jersey Semiconductor |
30 |
2N3054 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| | | |