| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BZW06-162 |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 2 |
BZW06-162B |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 3 |
CM1206-16CP |
4, 8 and 16-Channel ESD Protection Arrays in Chip Scale Package with OptiGuard™ Coating (PACDN24xxC pin compatible) |
California Micro Devices Corp |
| 4 |
CM1206-16CS |
4, 8 and 16-Channel ESD Protection Arrays in Chip Scale Package with OptiGuard™ Coating (PACDN24xxC pin compatible) |
California Micro Devices Corp |
| 5 |
STB60NE06-16 |
N-CHANNEL 60V - 0.013 OHM - 60A D2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 6 |
STB60NE06-16 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 7 |
STB60NE06-16 |
N-CHANNEL 60V - 0.013 OHM - 60A D2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 8 |
STP60NE06-16 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 9 |
STP60NE06-16 |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 10 |
STP60NE06-16FP |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 11 |
STV60NE06-16 |
N-CHANNEL 60V - 0.013 OHM - 60A POWERSO-10 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 12 |
STV60NE06-16 |
N-CHANNEL 60V - 0.013 OHM - 60A POWERSO-10 STRIPFET POWER MOSFET |
ST Microelectronics |
| 13 |
SUD50N06-16 |
N-Channel 60-V (D-S) 175C MOSFET |
Vishay |
| 14 |
SUM50N06-16L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
Vishay |
| 15 |
TMPG06-16 |
AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 16 |
TMPG06-16A |
AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| | | |
