No. |
Part Name |
Description |
Manufacturer |
1 |
10ETF06S |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
2 |
10ETF06STRL |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
3 |
10ETF06STRR |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
4 |
1206SXXX |
High Voltage MLC Chip |
AVX Corporation |
5 |
150D227X0006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
6 |
150D227X9006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
7 |
150D277X0006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
8 |
150D277X9006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
9 |
150D337X0006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
10 |
150D337X9006S2 |
Solid-Electrolyte TANTALEX Capacitors Hermetically-Sealed/ Axial-Lead |
Vishay |
11 |
15ETH06S |
600V 15A HyperFast Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
12 |
15ETL06S |
600V 15A Hyperfast Discrete Diode in a D2Pak package |
International Rectifier |
13 |
15ETX06S |
Hyperfast Rectifier |
International Rectifier |
14 |
1N4006S |
1.0 AMP SILICON RECTIFIERS |
Bytes |
15 |
1N4006S |
800 V, 1 A silicon rectifier |
Invac |
16 |
1N4006S |
PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
17 |
1N4006S |
Rectifier: Standard |
Taiwan Semiconductor |
18 |
1N4006S |
800 V, 1 A, plastic silicon rectifier |
TRANSYS Electronics Limited |
19 |
1N4006S |
PLASTIC SILICON RECTIFIER |
TRSYS |
20 |
1N4006SG |
Rectifier: Standard |
Taiwan Semiconductor |
21 |
20ETF06S |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
22 |
20ETF06STRL |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
23 |
20ETF06STRR |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
24 |
2N3906S |
Switching Transistor |
Korea Electronics (KEC) |
25 |
2N3906SC |
Switching Transistor |
Korea Electronics (KEC) |
26 |
2SJ506S |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
27 |
2SJ506S |
Transistors>Switching/MOSFETs |
Renesas |
28 |
30ETH06S |
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
29 |
5962-8515506SA |
Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 |
Texas Instruments |
30 |
74AUP1G06SE-7 |
SINGLE INVERTER WITH OPEN DRAIN OUTPUT |
Diodes |
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