| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CSA940 |
CSA940 PNP PLASTIC POWER TRANSISTOR, CSC2073 NPN PLASTIC POWER TRANSISTOR |
Continental Device India Limited |
| 2 |
CSC2073 |
CSA940 PNP PLASTIC POWER TRANSISTOR, CSC2073 NPN PLASTIC POWER TRANSISTOR |
Continental Device India Limited |
| 3 |
IRFP250 |
N-CHANNEL 200V 0.073 OHM 33A TO-247 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 4 |
IRFP250 |
N-CHANNEL 200V 0.073 OHM 33A TO-247 POWERMESH II MOSFET |
ST Microelectronics |
| 5 |
LPE-4841 |
Gapped and Ungapped, Custom Configurations Available |
Vishay |
| 6 |
NX8560SJ330-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-UPC connector. |
NEC |
| 7 |
NX8560SJ330-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-UPC connector. |
NEC |
| 8 |
NX8567SA330-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-UPC connector. |
NEC |
| 9 |
NX8567SA330-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-UPC connector. |
NEC |
| 10 |
NX8567SA338-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.45 THz. FC-UPC connector. |
NEC |
| 11 |
NX8567SA338-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.45 THz. SC-UPC connector. |
NEC |
| 12 |
NX8567SAM330-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-UPC connector. |
NEC |
| 13 |
NX8567SAM330-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-UPC connector. |
NEC |
| 14 |
NX8567SAS330-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-UPC connector. |
NEC |
| 15 |
NX8567SAS330-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-UPC connector. |
NEC |
| 16 |
NX8570SC330-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-PC connector. |
NEC |
| 17 |
NX8570SC330-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-PC connector. |
NEC |
| 18 |
NX8571SC330-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. FC-PC connector. |
NEC |
| 19 |
NX8571SC330-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1533.073 nm. Frequency 195.55 THz. SC-PC connector. |
NEC |
| 20 |
STB38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 21 |
STF38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 22 |
STFW38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-3PF package |
ST Microelectronics |
| 23 |
STP38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 24 |
STW38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 25 |
TC1072 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground curre |
Microchip |
| 26 |
TC1072-1.8VCH713 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed ... |
Microchip |
| 27 |
TC1072-2.5VCH713 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed ... |
Microchip |
| 28 |
TC1072-2.6VCH713 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed ... |
Microchip |
| 29 |
TC1072-2.7VCH713 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed ... |
Microchip |
| 30 |
TC1072-2.85VCH713 |
The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed ... |
Microchip |
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