Datasheets for 0811D

Datasheets found :: 19 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	FT0811DD	400 V, 25 mA surface mount TRIAC	Fagor
2	FT0811DH	400 V, 25 mA high commutation TRIAC	Fagor
3	FT0811DI	400 V, 25 mA high commutation TRIAC	Fagor
4	K4E160811D	2M x 8Bit CMOS Dynamic RAM with Extended Data Out	Samsung Electronic
5	K4E160811D-B	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
6	K4E160811D-F	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
7	K4E170811D	2M x 8Bit CMOS Dynamic RAM with Extended Data Out	Samsung Electronic
8	K4E170811D-B	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung Electronic
9	K4E170811D-F	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung Electronic
10	K4E660811D, K4E640811D	8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet	Samsung Electronic
11	K4E660811D, K4E640811D	8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet	Samsung Electronic
12	K4F160811D	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode	Samsung Electronic
13	K4F160811D-B	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
14	K4F160811D-F	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
15	K4F170811D	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode	Samsung Electronic
16	K4F170811D-B	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle.	Samsung Electronic
17	K4F170811D-F	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle.	Samsung Electronic
18	K4F660811D, K4F640811D	8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet	Samsung Electronic
19	K4F660811D, K4F640811D	8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet	Samsung Electronic

Datasheets found :: 19 Page: | 1 |