No. |
Part Name |
Description |
Manufacturer |
1 |
ATF1508AS-10AC100 |
High Performance E2 PLD |
Atmel |
2 |
ATF1508AS-10JC84 |
High Performance E2 PLD |
Atmel |
3 |
ATF1508AS-10QC100 |
High Performance E2 PLD |
Atmel |
4 |
ATF1508AS-10QC160 |
High Performance E2 PLD |
Atmel |
5 |
ATF1508AS-15AC100 |
High Performance E2 PLD |
Atmel |
6 |
ATF1508AS-15AI100 |
High performance EE PLD, 100MHz |
Atmel |
7 |
ATF1508AS-15JC84 |
High Performance E2 PLD |
Atmel |
8 |
ATF1508AS-15JI84 |
High Performance E2 PLD |
Atmel |
9 |
ATF1508AS-15QC100 |
High Performance E2 PLD |
Atmel |
10 |
ATF1508AS-15QC160 |
High Performance E2 PLD |
Atmel |
11 |
ATF1508AS-15QI100 |
High Performance E2 PLD |
Atmel |
12 |
ATF1508AS-15QI160 |
High Performance E2 PLD |
Atmel |
13 |
ATF1508AS-7AC100 |
High Performance E2 PLD |
Atmel |
14 |
ATF1508AS-7JC84 |
High performance EE PLD, 166.7MHz |
Atmel |
15 |
ATF1508AS-7QC100 |
High Performance E2 PLD |
Atmel |
16 |
ATF1508AS-7QC160 |
High Performance E2 PLD |
Atmel |
17 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
18 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
19 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
20 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
21 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
22 |
LP61L1008AS-10 |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |
AMIC Technology |
23 |
LP61L1008AS-12 |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |
AMIC Technology |
24 |
LP61L1008AS-8 |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |
AMIC Technology |
25 |
P2008AS-08SR |
3.3 or 5 V, 4 MHz to 32 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
26 |
P2008AS-08ST |
3.3 or 5 V, 4 MHz to 32 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
27 |
P2008AS-08TR |
3.3 or 5 V, 4 MHz to 32 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
28 |
P2008AS-08TT |
3.3 or 5 V, 4 MHz to 32 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
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