| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN8090S |
OVERVOLTAGE PROTECTIVE CIRCUIRS BUILT-IN SWITCHING POWER SUPPLY |
Panasonic |
| 2 |
APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm |
Advanced Power Technology |
| 3 |
APT10090SLL |
POWER MOS 7 1000V 12A 0.900 Ohm |
Advanced Power Technology |
| 4 |
APT10090SLLG |
MOSFET |
Microsemi |
| 5 |
BAT14-090S |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 6 |
BAT15-090S |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 7 |
EN29F08090S |
8 Megabit (1024K x 8-bit) Flash Memory |
Eon Silicon Solution |
| 8 |
EN29F08090SI |
8 Megabit (1024K x 8-bit) Flash Memory |
Eon Silicon Solution |
| 9 |
ISD33090S |
Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations |
etc |
| 10 |
ISD33090S |
90 seconds single chip voice record/playback device |
Information Storage Devices |
| 11 |
ISD33090SD |
Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations |
etc |
| 12 |
ISD33090SD |
90 seconds single chip voice record/playback device |
Information Storage Devices |
| 13 |
ISD33090SI |
Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations |
etc |
| 14 |
ISD33090SI |
90 seconds single chip voice record/playback device |
Information Storage Devices |
| 15 |
ISL71090SEH12 |
Radiation Hardened Ultra Low Noise, Precision Voltage Reference |
Intersil |
| 16 |
ISL71090SEH25 |
Radiation Hardened Ultra Low Noise, Precision Voltage Reference |
Intersil |
| 17 |
ISL71090SEH50 |
Radiation Hardened Ultra Low Noise, Precision Voltage Reference |
Intersil |
| 18 |
ISL71090SEH75 |
Radiation Hardened Ultra Low Noise, Precision Voltage Reference |
Intersil |
| 19 |
M35045-090SP |
SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS |
Mitsubishi Electric Corporation |
| 20 |
M35060-090SP |
SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS�������� |
Mitsubishi Electric Corporation |
| 21 |
MF1090S-1 |
FOR E-GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 22 |
MRF19090 |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 23 |
MRF19090 |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 24 |
MRF19090S |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
| 25 |
MRF19090SR3 |
1990 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 26 |
MRF19090SR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
| 27 |
MRF21090 |
MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 28 |
MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 29 |
MRF21090SR3 |
RF Power Field Effect Transistors |
Motorola |
| 30 |
PCN10C-090S-2.54DSA |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
| | | |
