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Datasheets for 0ALR

Datasheets found :: 31
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 AMD-K6-200ALR Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz Advanced Micro Devices
2 CEB4060ALR N-channel enhancement mode field effect transistor Chino-Excel Technology
3 CEP4060ALR N-channel enhancement mode field effect transistor Chino-Excel Technology
4 HM514260ALRR-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
5 HM514260ALRR-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
6 HM514260ALRR-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
7 HM514400ALR-6 1,048,576-word x 4-bid DRAM, 60ns Hitachi Semiconductor
8 HM514400ALR-7 1,048,576-word x 4-bid DRAM, 70ns Hitachi Semiconductor
9 HM514400ALR-8 1,048,576-word x 4-bid DRAM, 80ns Hitachi Semiconductor
10 HM514400ALRR-6 1,048,576-word x 4-bid DRAM, 60ns Hitachi Semiconductor
11 HM514400ALRR-7 1,048,576-word x 4-bid DRAM, 70ns Hitachi Semiconductor
12 HM514400ALRR-8 1,048,576-word x 4-bid DRAM, 80ns Hitachi Semiconductor
13 HM514800ALRR-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
14 HM514800ALRR-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
15 HM51S4260ALRR-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
16 HM51S4260ALRR-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
17 HM51S4260ALRR-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
18 HM51S4800ALRR-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
19 HM51S4800ALRR-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
20 HY514400ALR 1M x 4-bit CMOS DRAM etc
21 HY628400ALR2 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
22 HY628400ALR2-E 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
23 HY628400ALR2-I 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
24 KM684000ALR-5L 55ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
25 KM684000ALR-7L 70ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
26 KM684000ALRI-7L 70ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
27 MRF18030ALR3 GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET Freescale (Motorola)
28 MRF18030ALR3 RF Power Field Effect Transistors Motorola
29 NN5118160ALRR-50 CMOS 1M x 16BIT DYNAMIC RAM etc
30 NN5118160ALRR-60 CMOS 1M x 16BIT DYNAMIC RAM etc


Datasheets found :: 31
Page: | 1 | 2 |



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