Datasheets for 0ALR

Datasheets found :: 31 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	AMD-K6-200ALR	Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz	Advanced Micro Devices
2	CEB4060ALR	N-channel enhancement mode field effect transistor	Chino-Excel Technology
3	CEP4060ALR	N-channel enhancement mode field effect transistor	Chino-Excel Technology
4	HM514260ALRR-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
5	HM514260ALRR-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
6	HM514260ALRR-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
7	HM514400ALR-6	1,048,576-word x 4-bid DRAM, 60ns	Hitachi Semiconductor
8	HM514400ALR-7	1,048,576-word x 4-bid DRAM, 70ns	Hitachi Semiconductor
9	HM514400ALR-8	1,048,576-word x 4-bid DRAM, 80ns	Hitachi Semiconductor
10	HM514400ALRR-6	1,048,576-word x 4-bid DRAM, 60ns	Hitachi Semiconductor
11	HM514400ALRR-7	1,048,576-word x 4-bid DRAM, 70ns	Hitachi Semiconductor
12	HM514400ALRR-8	1,048,576-word x 4-bid DRAM, 80ns	Hitachi Semiconductor
13	HM514800ALRR-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
14	HM514800ALRR-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
15	HM51S4260ALRR-10	100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
16	HM51S4260ALRR-7	70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
17	HM51S4260ALRR-8	80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory	Hitachi Semiconductor
18	HM51S4800ALRR-7	70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
19	HM51S4800ALRR-8	80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory	Hitachi Semiconductor
20	HY514400ALR	1M x 4-bit CMOS DRAM	etc
21	HY628400ALR2	512K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix Semiconductor
22	HY628400ALR2-E	512K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix Semiconductor
23	HY628400ALR2-I	512K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix Semiconductor
24	KM684000ALR-5L	55ns, 512Kx8 bit low low power CMOS static RAM	Samsung Electronic
25	KM684000ALR-7L	70ns, 512Kx8 bit low low power CMOS static RAM	Samsung Electronic
26	KM684000ALRI-7L	70ns, 512Kx8 bit low low power CMOS static RAM	Samsung Electronic
27	MRF18030ALR3	GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
28	MRF18030ALR3	RF Power Field Effect Transistors	Motorola
29	NN5118160ALRR-50	CMOS 1M x 16BIT DYNAMIC RAM	etc
30	NN5118160ALRR-60	CMOS 1M x 16BIT DYNAMIC RAM	etc

Datasheets found :: 31 Page: | 1 | 2 |