| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM514400ALS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 2 |
HM514400ALS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 3 |
HM514400ALS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 4 |
MAX16930ALS/VY+CM7 |
2MHz, 36V, Dual Buck with Preboost and 20µA Quiescent Current |
MAXIM - Dallas Semiconductor |
| 5 |
MAX16930ALS/VY+CM8 |
2MHz, 36V, Dual Buck with Preboost and 20µA Quiescent Current |
MAXIM - Dallas Semiconductor |
| 6 |
MCA1300ALS |
High Performance ASL-TTL-Compatible Macrocell Arrays |
Motorola |
| 7 |
MCA2800ALS |
High Performance ASL-TTL-Compatible Macrocell Arrays |
Motorola |
| 8 |
MCA500ALS |
High Performance ASL-TTL-Compatible Macrocell Arrays |
Motorola |
| 9 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 10 |
MRF18060A |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 11 |
MRF18060ALSR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
| 12 |
MRF18060ALSR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
| | | |
