| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FDD1600N10ALZ |
N-Channel PowerTrench� MOSFET 100V, 6.8A, 160m? |
Fairchild Semiconductor |
| 2 |
FDD1600N10ALZD |
BoostPak (N-Channel PowerTrench� MOSFET + Diode) 100 V, 6.8 A, 160 m? |
Fairchild Semiconductor |
| 3 |
FDT1600N10ALZ |
N-Channel PowerTrench� MOSFET 100V, 5.6A, 160m? |
Fairchild Semiconductor |
| 4 |
HM514260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 5 |
HM514260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 6 |
HM514260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 7 |
HM514400ALZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 8 |
HM514400ALZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 9 |
HM514400ALZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 10 |
HM514800ALZ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 11 |
HM514800ALZ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 12 |
HM51S4260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13 |
HM51S4260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 14 |
HM51S4260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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