No. |
Part Name |
Description |
Manufacturer |
1 |
112CNQ030ASL |
30V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
2 |
113CNQ080ASL |
80V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
3 |
113CNQ100ASL |
100V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
4 |
2PB710ASL |
50 V, 500 mA PNP general-purpose transistors |
Nexperia |
5 |
2PB710ASL |
50 V, 500 mA PNP general-purpose transistors |
NXP Semiconductors |
6 |
80CNQ040ASL |
40V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
7 |
80CNQ040ASL |
Schottky Rectifier |
Microsemi |
8 |
80CNT020ASL |
20V 80A Trench Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
9 |
81CNQ040ASL |
40V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
10 |
81CNQ040ASL |
Schottky Rectifier |
Microsemi |
11 |
82CNQ030ASL |
30V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
12 |
83CNQ080ASL |
80V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
13 |
83CNQ100ASL |
100V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
14 |
87CNQ020ASL |
20V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
15 |
88CNQ060ASL |
60V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
16 |
89CNQ150ASL |
150V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
17 |
89CNQ150ASL |
Schottky Rectifier |
Microsemi |
18 |
CT20ASL-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE |
Mitsubishi Electric Corporation |
19 |
CT20ASL-8 |
STROBE FLASHER USE |
Powerex Power Semiconductors |
20 |
HM514400ASLJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
21 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
22 |
HM514400ASLJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
23 |
HM514400ASLR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
24 |
HM514400ASLR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
25 |
HM514400ASLR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
26 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
27 |
HM514400ASLRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
28 |
HM514400ASLRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
29 |
HM514400ASLS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
30 |
HM514400ASLS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
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