| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1/4M3.0AZ |
Zener Diode 1/4W 3.0V |
Motorola |
| 2 |
AD13280AZ |
Dual Channel, 12-Bit, 80 MSPS A/D Converter with Analog Input Signal Conditioning |
Analog Devices |
| 3 |
AQV210AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 4 |
AQW210AZ |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 5 |
BC490AZL1 |
PNP Silicon Plastic Transistor |
ON Semiconductor |
| 6 |
CY2DL1510AZC |
1:10 Differential LVDS Fanout Buffer |
Cypress |
| 7 |
CY2DL1510AZCT |
1:10 Differential LVDS Fanout Buffer |
Cypress |
| 8 |
CY2DL1510AZI |
1:10 Differential LVDS Fanout Buffer |
Cypress |
| 9 |
CY2DL1510AZIT |
1:10 Differential LVDS Fanout Buffer |
Cypress |
| 10 |
CY2DL15110AZI |
1:10 Differential LVDS Fanout Buffer with Selectable Clock Input |
Cypress |
| 11 |
CY2DL15110AZIT |
1:10 Differential LVDS Fanout Buffer with Selectable Clock Input |
Cypress |
| 12 |
CY7C68310-80AZC |
ISD-300LP(TM) Low-Power USB 2.0 to ATA/ATAPI Bridge IC |
Cypress |
| 13 |
ENW89820AZ1F |
Bluetooth Smart (Low Energy) - PAN172x |
Panasonic |
| 14 |
ENW89820AZ2F |
Bluetooth Smart (Low Energy) - PAN172x |
Panasonic |
| 15 |
ES5120AZ |
3 3/4 digit A/D converter |
Cyrustek Co |
| 16 |
ES5120AZ |
3 3/4 DIGIT A/D CONVERTER |
etc |
| 17 |
HLMAQH00AZR |
AllnGaP Orange Clear Solid State LED Lamp Subminiature T-1 3/4 (1.9 mm) |
Fairchild Semiconductor |
| 18 |
HLMAQL00AZR |
AllnGaP Yellow Clear Solid State LED Lamp Subminiature T-1 3/4 (1.9 mm) |
Fairchild Semiconductor |
| 19 |
HLMPQ150AZR |
High Efficiency Red Rectangular Solid State Lamp |
Fairchild Semiconductor |
| 20 |
HM514260AZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 21 |
HM514260AZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 22 |
HM514260AZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 23 |
HM514400AZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 24 |
HM514400AZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 25 |
HM514400AZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 26 |
HM514800AZ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 27 |
HM514800AZ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 28 |
HM51S4260AZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM51S4260AZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM51S4260AZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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