No. |
Part Name |
Description |
Manufacturer |
1 |
GAL20RA10B-30LJ |
High-Speed Asynchronous E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
2 |
GAL20RA10B-30LP |
High-Speed Asynchronous E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
3 |
HCPL-7800B-300 |
High CMR Isolation Amplifiers |
Agilent (Hewlett-Packard) |
4 |
HCPL-7800B-300 |
High CMR isolation amplifier |
Agilent (Hewlett-Packard) |
5 |
HS3140B-3/883 |
14-Bit Multiplying DACs |
Sipex Corporation |
6 |
HS3140B-3Q |
14-Bit Multiplying DACs |
Sipex Corporation |
7 |
HS3140B-3_833 |
14-bit multiplying DACs |
Sipex Corporation |
8 |
IRAMS10UP60B-3 |
Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor. |
International Rectifier |
9 |
LFX1200B-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
10 |
LFX200B-3F900C |
The ispXPGA architecture |
Lattice Semiconductor |
11 |
LFX200B-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
12 |
LFX500B-3F900C |
The ispXPGA architecture |
Lattice Semiconductor |
13 |
LFX500B-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
14 |
MCR380B-30 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 380 Amperes RMS |
Motorola |
15 |
T224160B-30 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
16 |
T224160B-35 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
17 |
VS100B-3 |
Single output 10W~150W |
DENSEI-LAMBDA |
18 |
VS100B-36 |
Single output 10W~150W |
DENSEI-LAMBDA |
19 |
VS10B-3 |
Single output 10W~150W |
DENSEI-LAMBDA |
20 |
VS150B-3 |
Single output 10W~150W |
DENSEI-LAMBDA |
21 |
VS150B-36 |
Single output 10W~150W |
DENSEI-LAMBDA |
22 |
VS30B-3 |
Single output 10W~150W |
DENSEI-LAMBDA |
23 |
VS30B-36 |
Single output 10W~150W |
DENSEI-LAMBDA |
24 |
VS50B-3 |
Single output 10W~150W |
DENSEI-LAMBDA |
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